A 75–305-GHz Power Amplifier MMIC With 10–14.9-dBm <i>P</i><sub>out</sub> in a 35-nm InGaAs mHEMT Technology
نویسندگان
چکیده
The demonstration of a 75-305-GHz power amplifier (PA) monolithic microwave integrated circuit (MMIC) is presented in this letter. PA based on an eight-cell traveling-wave unit (UA). Each cell contains RF cascode with two two-finger transistors gate width 20 ?m each. In the output stage, balanced configuration combines UAs Lange couplers. front, third UA used as driver amplifier. MMIC fabricated 35-nm gate-length metamorphic high-electron-mobility transistor technology. From 75 to 305 GHz, yields minimum 10 dBm average value 12.8 dBm. At 200 peak and PAE 14.9 6.6% achieved, respectively. To best authors' knowledge, first octave-bandwidth that provides at 300 GHz.
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ژورنال
عنوان ژورنال: IEEE Microwave and Wireless Components Letters
سال: 2021
ISSN: ['1531-1309', '1558-1764']
DOI: https://doi.org/10.1109/lmwc.2021.3058101